power transistors 1 publication date: march 2003 sjd00056aed parameter symbol conditions min typ max unit collector-emitter voltage 2SB1180 v ceo i c = ? 30 ma, i b = 0 ? 60 v (base open) 2SB1180a ? 80 collector-base cutoff 2SB1180 i cbo v cb = ? 60 v, i e = 0 ? 100 a current (emitter open) 2SB1180a v cb = ? 80 v, i e = 0 ? 100 emitter-base cutoff current (collector open) i ebo v eb = ? 7 v, i c = 0 ? 2ma forward current transfer ratio h fe1 * v ce = ? 3 v, i c = ? 4 a 2 000 10 000 ? h fe2 v ce = ? 3 v, i c = ? 8 a 500 collector-emitter saturation voltage v ce(sat) i c = ? 4 a, i b = ? 8 ma ? 1.5 v base-emitter saturation voltage v be(sat) i c = ? 4 a, i b = ? 8 ma ? 2v transition frequency f t v ce = ? 3 v, i c = ? 1 a, f = 1 mhz 20 mhz turn-on time t on i c = ? 4 a, i b1 = ? 8 ma, i b2 = 8 ma 0.5 s storage time t stg v cc = ? 50 v 2.0 s fall time t f 1.0 s 2SB1180, 2SB1180a silicon pnp epitaxial planar type darlington for medium-speed voltage switching complementary to 2sd1750, 2sd1750a features ? high forward current transfer ratio h fe ? i type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c 7.0 0.3 3.5 0.2 0? to 0.15? 12.6 0.3 7.2 0.3 2.5 0.2 2.5 0.2 (1.0) (1.0) 1.0 0.2 3.0 0.2 2.0 0.2 1.1 0.1 0.75 0.1 0.9 0.1 0? to 0.15? 0.4 0.1 2.3 0.2 4.6 0.4 123 unit: mm 1: base 2: collector 3: emitter i-g1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification parameter symbol rating unit collector-base voltage 2SB1180 v cbo ? 60 v (emitter open) 2SB1180a ? 80 collector-emitter voltage 2SB1180 v ceo ? 60 v (base open) 2SB1180a ? 80 emitter-base voltage (collector open) v ebo ? 7v collector current i c ? 8a peak collector current i cp ? 12 a collector power dissipation p c 15 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) self-supported type package is also prepared. rank q p h fe1 2 000 to 5 000 4 000 to 10 000 internal connection b c e
2SB1180, 2SB1180a 2 sjd00056aed v ce(sat) ? i c v be(sat) ? i c v be(sat) ? i c p c ? t a i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb safe operation area 0 0 160 40 120 80 5 15 10 20 (1)t c =ta (2)without heat sink (p c =1.3w) (1) (2) collector power dissipation p c ( w ) ambient temperature t a ( c ) 0 ? 2 ? 6 ? 4 ? 8 0 ? 5 ? 1 ? 2 ? 4 ? 3 i b =?2.0ma ?1.8ma ?1.6ma ?1.4ma ?1.2ma ?1.0ma ?0.8ma ?0.6ma ?0.4ma ?0.2ma t c =25?c collector current i c ( a ) collector-emitter voltage v ce ( v ) ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) i c /i b =500 t c =100?c ?25?c 25?c ? 0.1 ? 0.1 ? 1 ? 10 ? 100 ? 1 ? 10 (1) i c /i b =250 (2) i c /i b =500 (3) i c /i b =1000 t c =25 c (1) (2) (3) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) ? 0.1 ? 1 ? 10 ? 1 ? 100 ? 0.1 ? 10 base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) i c /i b =500 t c =?25?c 25?c 100?c ? 0.1 ? 0.1 ? 1 ? 10 ? 10 ? 1 ? 100 base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) (1) (2) (3) (1)i c /i b =250 (2)i c /i b =500 (3)i c /i b =1000 t c =25?c ? 0.1 ? 1 ? 10 10 2 10 5 10 4 10 3 forward current transfer ratio h fe collector current i c ( a ) v ce =?3v t c =100?c 25?c ?25?c ? 0.1 ? 1 ? 10 ? 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) i e =0 f=1mhz t c =25?c ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 collector current i c ( a ) collector-emitter voltage v ce ( v ) non repetitive pulse t c =25?c t=10ms t=300ms t=1ms i cp 2SB1180a 2SB1180 i c
2SB1180, 2SB1180a 3 sjd00056aed r th ? t 10 ? 1 1 10 10 3 10 2 10 ? 4 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 3 thermal resistance r th ( c/w) time t (s) (1) (2) (1)without heat sink (2)with a 50 50 2mm al heat sink
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